FDB6670AL_Q

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FDB6670AL_Q datasheet

• Маркировка
  FDB6670AL_Q
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FDB6670AL_Q Configuration: Single Continuous Drain Current: 80 A Drain-source Breakdown Voltage: 30 V Fall Time: 15 ns Forward Transconductance Gfs (max / Min): 115 S Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: TO-263AB Power Dissipation: 68 W Resistance Drain-source Rds (on): 0.0065 Ohms at 10 V Rise Time: 13 ns Transistor Polarity: N-Channel Typical Turn-off Delay Time: 42 ns Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0065 Ohms at 10 V Forward Transconductance gFS (Max / Min): 115 S Typical Turn-Off Delay Time: 42 ns
• Количество страниц
  5 шт.
• Форматы файла
  HTML, PDF

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